W978H2KBVX1E TR
Winbond Electronics
Winbond Electronics
256MB LPDDR2, X32, 533MHZ, -25 ~
$4.26
Available to order
Reference Price (USD)
1+
$4.26000
500+
$4.2174
1000+
$4.1748
1500+
$4.1322
2000+
$4.0896
2500+
$4.047
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Winbond Electronics W978H2KBVX1E TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W978H2KBVX1E TR
$4.26
Product details
The W978H2KBVX1E TR memory IC from Winbond Electronics provides a robust storage solution for mission-critical data applications. This high-reliability product offers excellent performance characteristics, designed to meet the evolving needs of advanced electronic systems. Its architecture supports both high-density storage and rapid data access requirements.
Key attributes include error detection and correction functionality, extended lifecycle endurance, and wide operating voltage range. The W978H2KBVX1E TR incorporates advanced security features to protect sensitive information while maintaining high-speed operation. Its design ensures compatibility with various host interfaces for flexible system integration.
Primary application sectors include defense systems, nuclear power plant controls, and emergency communication networks. The memory IC also excels in railway signaling systems, oil and gas monitoring equipment, and marine navigation devices. Its reliability makes it suitable for seismic monitoring stations and critical infrastructure protection systems.
For complete technical details and purchasing information about this Winbond Electronics memory solution, please submit your inquiry online. Our specialists will provide expert guidance on implementing the W978H2KBVX1E TR in your specific application, along with competitive pricing options.
General specs
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4B
- Memory Size: 256Mb (8M x 32)
- Memory Interface: HSUL_12
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-VFBGA (10x11.5)
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