W959D8NFYA5I TR
Winbond Electronics
Winbond Electronics
2GB LPDDR2, X32, 400MHZ, -40 ~ 1
$3.91
Available to order
Reference Price (USD)
1+
$3.91195
500+
$3.8728305
1000+
$3.833711
1500+
$3.7945915
2000+
$3.755472
2500+
$3.7163525
Exquisite packaging
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| EMS | 3-7 days |
Winbond Electronics W959D8NFYA5I TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W959D8NFYA5I TR
$3.91
Product details
Introducing the W959D8NFYA5I TR from Winbond Electronics, a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments.
Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The W959D8NFYA5I TR incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions.
The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The W959D8NFYA5I TR also serves well in smart city infrastructure and portable military communication devices.
For detailed technical information and purchasing options for this Winbond Electronics memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the W959D8NFYA5I TR to ensure successful implementation in your design.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: HyperRAM
- Memory Size: 512Mb (64M x 8)
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA, DDP (6x8)
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