W957D8MFYA5I TR
Winbond Electronics
Winbond Electronics
128MB HYPERRAM X8, 200MHZ, IND T
$3.09
Available to order
Reference Price (USD)
1+
$3.09355
500+
$3.0626145
1000+
$3.031679
1500+
$3.0007435
2000+
$2.969808
2500+
$2.9388725
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Winbond Electronics W957D8MFYA5I TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W957D8MFYA5I TR
$3.09
Product details
The W957D8MFYA5I TR memory IC by Winbond Electronics delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications.
Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The W957D8MFYA5I TR offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance.
Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The W957D8MFYA5I TR is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis.
To learn more about implementing this Winbond Electronics memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the W957D8MFYA5I TR memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: HyperRAM
- Memory Size: 128Mb (16M x 8)
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 36 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA, DDP (6x8)
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