W956D8MBYA5I
Winbond Electronics
Winbond Electronics
64MB HYPERRAM X8, 200MHZ, IND TE
$1.94
Available to order
Reference Price (USD)
1+
$1.93971
500+
$1.9203129
1000+
$1.9009158
1500+
$1.8815187
2000+
$1.8621216
2500+
$1.8427245
Exquisite packaging
Discount
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| EMS | 3-7 days |
Winbond Electronics W956D8MBYA5I is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W956D8MBYA5I
$1.94
Product details
Winbond Electronics's W956D8MBYA5I memory IC sets new standards in non-volatile storage technology, delivering robust performance for mission-critical applications. This memory solution offers the perfect balance of speed, capacity, and reliability, engineered to meet the evolving needs of modern electronics. Its architecture ensures data persistence without constant power supply.
The W956D8MBYA5I features include advanced wear-leveling algorithms, error correction capabilities, and wide temperature operation range. These attributes make it particularly valuable for applications requiring long-term data retention and consistent performance. The memory IC supports various interface protocols, enabling easy integration into existing system designs.
Primary applications include automotive telematics systems, industrial programmable logic controllers, and smart grid infrastructure. The W956D8MBYA5I is also ideal for wearable health monitors, digital signage solutions, and edge computing devices. Its reliability makes it suitable for aerospace black box recorders and underground mining equipment.
Discover the full potential of this Winbond Electronics memory IC by submitting your inquiry through our online portal. Our sales team will provide detailed specifications and competitive pricing options for the W956D8MBYA5I to meet your project timeline and budget requirements.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 64Mb (8M x 8)
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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