W947D6HBHX5I
Winbond Electronics
Winbond Electronics
IC DRAM 128MBIT PARALLEL 60VFBGA
$2.78
Available to order
Reference Price (USD)
1+
$2.98000
10+
$2.67900
25+
$2.63640
50+
$2.62960
100+
$2.34960
312+
$2.27327
624+
$2.26478
1,248+
$2.10927
Exquisite packaging
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| EMS | 3-7 days |
Winbond Electronics W947D6HBHX5I is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W947D6HBHX5I
$2.78
Product details
Winbond Electronics's W947D6HBHX5I memory IC sets new standards in non-volatile storage technology, delivering robust performance for mission-critical applications. This memory solution offers the perfect balance of speed, capacity, and reliability, engineered to meet the evolving needs of modern electronics. Its architecture ensures data persistence without constant power supply.
The W947D6HBHX5I features include advanced wear-leveling algorithms, error correction capabilities, and wide temperature operation range. These attributes make it particularly valuable for applications requiring long-term data retention and consistent performance. The memory IC supports various interface protocols, enabling easy integration into existing system designs.
Primary applications include automotive telematics systems, industrial programmable logic controllers, and smart grid infrastructure. The W947D6HBHX5I is also ideal for wearable health monitors, digital signage solutions, and edge computing devices. Its reliability makes it suitable for aerospace black box recorders and underground mining equipment.
Discover the full potential of this Winbond Electronics memory IC by submitting your inquiry through our online portal. Our sales team will provide detailed specifications and competitive pricing options for the W947D6HBHX5I to meet your project timeline and budget requirements.
General specs
- Product Status: Last Time Buy
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-VFBGA (8x9)
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