W947D6HBHX5E
Winbond Electronics
Winbond Electronics
IC DRAM 128MBIT PARALLEL 60VFBGA
$3.53
Available to order
Reference Price (USD)
1+
$2.98000
10+
$2.67900
25+
$2.63640
50+
$2.62960
100+
$2.34960
312+
$2.27327
624+
$2.26478
1,248+
$2.10927
Exquisite packaging
Discount
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| EMS | 3-7 days |
Winbond Electronics W947D6HBHX5E is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W947D6HBHX5E
$3.53
Product details
The W947D6HBHX5E memory IC by Winbond Electronics delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications.
Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The W947D6HBHX5E offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance.
Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The W947D6HBHX5E is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis.
To learn more about implementing this Winbond Electronics memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the W947D6HBHX5E memory solution.
General specs
- Product Status: Last Time Buy
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-VFBGA (8x9)
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