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W66CQ2NQUAGJ

Winbond Electronics
W66CQ2NQUAGJ Preview
Winbond Electronics
4GB LPDDR4X, DDP, X32, 1866MHZ,
$8.30
Available to order
Reference Price (USD)
1+
$8.30083
500+
$8.2178217
1000+
$8.1348134
1500+
$8.0518051
2000+
$7.9687968
2500+
$7.8857885
Exquisite packaging
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Winbond Electronics W66CQ2NQUAGJ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W66CQ2NQUAGJ

W66CQ2NQUAGJ

$8.30

Product details

Discover the W66CQ2NQUAGJ by Winbond Electronics, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The W66CQ2NQUAGJ features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The W66CQ2NQUAGJ is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Winbond Electronics memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the W66CQ2NQUAGJ, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: LVSTL_11
  • Clock Frequency: 1.866 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)

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