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W66CM2NQUAHJ

Winbond Electronics
W66CM2NQUAHJ Preview
Winbond Electronics
4GB LPDDR4X, DDP, X32, 2133MHZ,
$9.76
Available to order
Reference Price (USD)
1+
$9.75715
500+
$9.6595785
1000+
$9.562007
1500+
$9.4644355
2000+
$9.366864
2500+
$9.2692925
Exquisite packaging
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Winbond Electronics W66CM2NQUAHJ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W66CM2NQUAHJ

W66CM2NQUAHJ

$9.76

Product details

Introducing the W66CM2NQUAHJ from Winbond Electronics, a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments. Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The W66CM2NQUAHJ incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions. The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The W66CM2NQUAHJ also serves well in smart city infrastructure and portable military communication devices. For detailed technical information and purchasing options for this Winbond Electronics memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the W66CM2NQUAHJ to ensure successful implementation in your design.

General specs

  • Product Status: Not For New Designs
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: LVSTL_11
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)

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