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W66CM2NQUAHJ TR

Winbond Electronics
W66CM2NQUAHJ TR Preview
Winbond Electronics
4GB LPDDR4X, DDP, X32, 2133MHZ,
$9.09
Available to order
Reference Price (USD)
1+
$9.09000
500+
$8.9991
1000+
$8.9082
1500+
$8.8173
2000+
$8.7264
2500+
$8.6355
Exquisite packaging
Discount
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TNT 2-6 days
EMS 3-7 days

Winbond Electronics W66CM2NQUAHJ TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W66CM2NQUAHJ TR

W66CM2NQUAHJ TR

$9.09

Product details

The W66CM2NQUAHJ TR from Winbond Electronics is a high-performance memory IC designed for demanding applications. This versatile memory solution offers reliable data storage and fast access times, making it ideal for a wide range of electronic systems. With its advanced architecture, the W66CM2NQUAHJ TR ensures efficient operation in both industrial and commercial environments. Key features include low power consumption, robust data retention, and seamless integration with various host systems. The memory IC supports multiple read/write operations without compromising performance, ensuring smooth operation in data-intensive scenarios. Its compact design allows for easy implementation in space-constrained applications while maintaining high reliability. Applications span across industries, including automotive electronics for infotainment systems, industrial automation for data logging, and consumer electronics for smart devices. The W66CM2NQUAHJ TR is also suitable for medical equipment requiring secure data storage and telecommunications infrastructure needing high-speed memory solutions. For pricing and availability of this Winbond Electronics memory IC, please submit your inquiry through our online platform. Our team will provide you with competitive quotes and technical support to meet your project requirements.

General specs

  • Product Status: Not For New Designs
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: LVSTL_11
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)

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