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W66BQ6NBUAGJ

Winbond Electronics
W66BQ6NBUAGJ Preview
Winbond Electronics
2GB LPDDR4X, X16, 1866MHZ, -40C~
$6.06
Available to order
Reference Price (USD)
1+
$6.05514
500+
$5.9945886
1000+
$5.9340372
1500+
$5.8734858
2000+
$5.8129344
2500+
$5.752383
Exquisite packaging
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Winbond Electronics W66BQ6NBUAGJ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W66BQ6NBUAGJ

W66BQ6NBUAGJ

$6.06

Product details

Enhance your system's performance with the W66BQ6NBUAGJ memory IC from Winbond Electronics, a cutting-edge solution for modern data storage needs. This memory product delivers exceptional speed and reliability, engineered to meet the rigorous demands of today's electronic applications. Its innovative design ensures optimal performance in various operating conditions. The W66BQ6NBUAGJ boasts features such as extended endurance, wide operating voltage range, and excellent temperature stability. These characteristics make it particularly suitable for applications requiring consistent performance under challenging environmental conditions. The memory IC maintains data integrity even during power fluctuations, providing peace of mind for critical systems. Ideal applications include aerospace avionics systems, military communication equipment, and industrial control units. The W66BQ6NBUAGJ also excels in IoT devices requiring persistent memory and enterprise storage solutions demanding high capacity. Its versatility extends to renewable energy systems where reliable data storage is crucial for operation monitoring. Contact us today through our online inquiry system to learn more about the W66BQ6NBUAGJ and how it can benefit your specific application. Our experts are ready to assist with technical details and procurement options for this Winbond Electronics memory solution.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: LVSTL_11
  • Clock Frequency: 1.866 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)

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