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W66BQ6NBUAFJ TR

Winbond Electronics
W66BQ6NBUAFJ TR Preview
Winbond Electronics
2GB LPDDR4X, X16, 1600MHZ, -40C~
$5.10
Available to order
Reference Price (USD)
1+
$5.10004
500+
$5.0490396
1000+
$4.9980392
1500+
$4.9470388
2000+
$4.8960384
2500+
$4.845038
Exquisite packaging
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Winbond Electronics W66BQ6NBUAFJ TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W66BQ6NBUAFJ TR

W66BQ6NBUAFJ TR

$5.10

Product details

The W66BQ6NBUAFJ TR by Winbond Electronics represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers. Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The W66BQ6NBUAFJ TR demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades. This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The W66BQ6NBUAFJ TR also serves well in advanced medical imaging equipment and scientific instrumentation. To explore how this Winbond Electronics memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the W66BQ6NBUAFJ TR memory solution.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: LVSTL_11
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)

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