W66BP6NBUAGJ TR
Winbond Electronics
Winbond Electronics
2GB LPDDR4, X16, 1866MHZ, -40C~1
$5.28
Available to order
Reference Price (USD)
1+
$5.28273
500+
$5.2299027
1000+
$5.1770754
1500+
$5.1242481
2000+
$5.0714208
2500+
$5.0185935
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
Winbond Electronics W66BP6NBUAGJ TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W66BP6NBUAGJ TR
$5.28
Product details
Enhance your system's performance with the W66BP6NBUAGJ TR memory IC from Winbond Electronics, a cutting-edge solution for modern data storage needs. This memory product delivers exceptional speed and reliability, engineered to meet the rigorous demands of today's electronic applications. Its innovative design ensures optimal performance in various operating conditions.
The W66BP6NBUAGJ TR boasts features such as extended endurance, wide operating voltage range, and excellent temperature stability. These characteristics make it particularly suitable for applications requiring consistent performance under challenging environmental conditions. The memory IC maintains data integrity even during power fluctuations, providing peace of mind for critical systems.
Ideal applications include aerospace avionics systems, military communication equipment, and industrial control units. The W66BP6NBUAGJ TR also excels in IoT devices requiring persistent memory and enterprise storage solutions demanding high capacity. Its versatility extends to renewable energy systems where reliable data storage is crucial for operation monitoring.
Contact us today through our online inquiry system to learn more about the W66BP6NBUAGJ TR and how it can benefit your specific application. Our experts are ready to assist with technical details and procurement options for this Winbond Electronics memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.866 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
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