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W66BM6NBUAHJ

Winbond Electronics
W66BM6NBUAHJ Preview
Winbond Electronics
2GB LPDDR4X, X16, 2133MHZ, -40C~
$7.06
Available to order
Reference Price (USD)
1+
$7.06438
500+
$6.9937362
1000+
$6.9230924
1500+
$6.8524486
2000+
$6.7818048
2500+
$6.711161
Exquisite packaging
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Winbond Electronics W66BM6NBUAHJ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W66BM6NBUAHJ

W66BM6NBUAHJ

$7.06

Product details

The W66BM6NBUAHJ by Winbond Electronics represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers. Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The W66BM6NBUAHJ demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades. This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The W66BM6NBUAHJ also serves well in advanced medical imaging equipment and scientific instrumentation. To explore how this Winbond Electronics memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the W66BM6NBUAHJ memory solution.

General specs

  • Product Status: Not For New Designs
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: LVSTL_11
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)

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