W66BM6NBUAFJ
Winbond Electronics
Winbond Electronics
2GB LPDDR4X, X16, 1600MHZ, -40C~
$6.33
Available to order
Reference Price (USD)
1+
$6.32882
500+
$6.2655318
1000+
$6.2022436
1500+
$6.1389554
2000+
$6.0756672
2500+
$6.012379
Exquisite packaging
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Winbond Electronics W66BM6NBUAFJ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W66BM6NBUAFJ
$6.33
Product details
The W66BM6NBUAFJ by Winbond Electronics represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The W66BM6NBUAFJ demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The W66BM6NBUAFJ also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Winbond Electronics memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the W66BM6NBUAFJ memory solution.
General specs
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
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