W632GU6NB12I TR
Winbond Electronics
Winbond Electronics
2GB DDR3L 1.35V SDRAM, X16, INDU
$5.22
Available to order
Reference Price (USD)
1+
$5.22000
500+
$5.1678
1000+
$5.1156
1500+
$5.0634
2000+
$5.0112
2500+
$4.959
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Winbond Electronics W632GU6NB12I TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W632GU6NB12I TR
$5.22
Product details
Winbond Electronics's W632GU6NB12I TR represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability.
Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The W632GU6NB12I TR supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications.
The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The W632GU6NB12I TR serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions.
Explore the capabilities of this Winbond Electronics memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the W632GU6NB12I TR to support your project development cycle.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-VFBGA
- Supplier Device Package: 96-VFBGA (7.5x13)
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