W632GU6NB09I TR
Winbond Electronics
Winbond Electronics
2GB DDR3L 1.35V SDRAM, X16, INDU
$5.80
Available to order
Reference Price (USD)
1+
$5.80500
500+
$5.74695
1000+
$5.6889
1500+
$5.63085
2000+
$5.5728
2500+
$5.51475
Exquisite packaging
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| EMS | 3-7 days |
Winbond Electronics W632GU6NB09I TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W632GU6NB09I TR
$5.80
Product details
Discover the W632GU6NB09I TR by Winbond Electronics, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications.
The W632GU6NB09I TR features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation.
Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The W632GU6NB09I TR is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions.
To learn more about integrating this Winbond Electronics memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the W632GU6NB09I TR, ensuring optimal memory performance for your specific requirements.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 1.066 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-VFBGA
- Supplier Device Package: 96-VFBGA (7.5x13)
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