W631GU8NB09I TR
Winbond Electronics
Winbond Electronics
1GB DDR3L 1.35V SDRAM, X8, 1066M
$5.63
Available to order
Reference Price (USD)
1+
$5.63000
500+
$5.5737
1000+
$5.5174
1500+
$5.4611
2000+
$5.4048
2500+
$5.3485
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Winbond Electronics W631GU8NB09I TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W631GU8NB09I TR
$5.63
Product details
The W631GU8NB09I TR memory IC by Winbond Electronics delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications.
Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The W631GU8NB09I TR offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance.
Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The W631GU8NB09I TR is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis.
To learn more about implementing this Winbond Electronics memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the W631GU8NB09I TR memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 1.066 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-VFBGA
- Supplier Device Package: 78-VFBGA (8x10.5)
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