WNSC6D20650B6J
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE SCHOTTKY DIODE I
$5.39
Available to order
Reference Price (USD)
1+
$5.39000
500+
$5.3361
1000+
$5.2822
1500+
$5.2283
2000+
$5.1744
2500+
$5.1205
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WNSC6D20650B6J
$5.39
Product details
WeEn Semiconductors's WNSC6D20650B6J single rectifier diode delivers exceptional performance in a compact, reliable package. This component is designed for efficient power rectification with minimal energy loss, featuring advanced semiconductor materials for optimal thermal management. The diode exhibits excellent forward conduction characteristics and reliable reverse blocking capability, making it suitable for diverse electronic systems. Its fast recovery time ensures efficient operation in high-frequency switching applications. Primary uses include telecommunications infrastructure, server power supplies, and medical imaging equipment. The WNSC6D20650B6J also performs well in harsh environment applications such as downhole drilling instrumentation. Key features include superior surge current tolerance and stable operation across temperature variations. Engineers will appreciate its consistent performance in precision power conversion tasks. For technical specifications and purchasing options, contact our expert team to discuss your application requirements.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 80 µA @ 650 V
- Capacitance @ Vr, F: 780pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: 175°C
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