WNSC10650T6J
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$3.68
Available to order
Reference Price (USD)
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$3.68000
500+
$3.6432
1000+
$3.6064
1500+
$3.5696
2000+
$3.5328
2500+
$3.496
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WeEn Semiconductors WNSC10650T6J is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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WNSC10650T6J
$3.68
Product details
The WNSC10650T6J by WeEn Semiconductors is a premium-quality single rectifier diode designed for demanding electronic applications. This component offers outstanding rectification efficiency with low forward voltage drop, ensuring optimal power conversion performance. Its robust construction features advanced junction technology for improved current handling and thermal stability. The diode's fast switching characteristics make it ideal for high-frequency power supplies and switching regulators. Industrial applications include welding equipment, elevator controls, and factory automation systems. The WNSC10650T6J also excels in renewable energy systems such as wind turbine converters. Key benefits include excellent reverse recovery properties and consistent operation across temperature extremes. Designed for reliability, this diode meets rigorous industry standards for quality and performance. Whether for prototyping or mass production, the WNSC10650T6J delivers exceptional results. Submit your inquiry now to access this high-performance rectifier solution for your technical requirements.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 650 V
- Capacitance @ Vr, F: 328pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-VSFN Exposed Pad
- Supplier Device Package: 5-DFN (8x8)
- Operating Temperature - Junction: 175°C (Max)
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