WNSC08650T6J
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$3.24
Available to order
Reference Price (USD)
1+
$3.24000
500+
$3.2076
1000+
$3.1752
1500+
$3.1428
2000+
$3.1104
2500+
$3.078
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
WeEn Semiconductors WNSC08650T6J is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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WNSC08650T6J
$3.24
Product details
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 267pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-VSFN Exposed Pad
- Supplier Device Package: 5-DFN (8x8)
- Operating Temperature - Junction: 175°C (Max)
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