PHD13005,127
WeEn Semiconductors
WeEn Semiconductors
TRANS NPN 400V 4A TO220AB
$0.61
Available to order
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1+
$0.57000
10+
$0.48500
100+
$0.36190
500+
$0.28436
1,000+
$0.21973
Exquisite packaging
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PHD13005,127
$0.61
Product details
Experience superior semiconductor performance with the PHD13005,127, a high-efficiency Bipolar Junction Transistor from WeEn Semiconductors. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The PHD13005,127 demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. WeEn Semiconductors produces the PHD13005,127 using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the PHD13005,127 stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
- Power - Max: 75 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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