NXPSC06650X6Q
WeEn Semiconductors
WeEn Semiconductors
DIODE SCHOTTKY 650V 6A TO220F
$3.90
Available to order
Reference Price (USD)
1+
$3.90000
500+
$3.861
1000+
$3.822
1500+
$3.783
2000+
$3.744
2500+
$3.705
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NXPSC06650X6Q
$3.90
Product details
Experience superior rectification performance with the NXPSC06650X6Q single diode from WeEn Semiconductors, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The NXPSC06650X6Q performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the NXPSC06650X6Q delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 650 V
- Capacitance @ Vr, F: 190pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: TO-220F
- Operating Temperature - Junction: 175°C (Max)
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