BYV30JT-600PQ
WeEn Semiconductors
WeEn Semiconductors
DIODE GEN PURP 600V 30A TO-3P
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Reference Price (USD)
2,400+
$0.84000
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| EMS | 3-7 days |
WeEn Semiconductors BYV30JT-600PQ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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BYV30JT-600PQ
$0.00
Product details
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 65 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Operating Temperature - Junction: 175°C (Max)
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