SQUN702E-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N&P-CH COMMON DRAIN
$3.81
Available to order
Reference Price (USD)
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$3.81000
500+
$3.7719
1000+
$3.7338
1500+
$3.6957
2000+
$3.6576
2500+
$3.6195
Exquisite packaging
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SQUN702E-T1_GE3
$3.81
Product details
Introducing the SQUN702E-T1_GE3 from Vishay Siliconix, a high-performance MOSFET array in the Discrete Semiconductor Products category. Part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is designed for applications requiring robust power handling and efficient switching.\n\nThe SQUN702E-T1_GE3 offers features such as low gate charge, high current capability, and excellent thermal performance. The array format integrates multiple transistors, simplifying design and reducing component count. Its reliable construction ensures consistent operation in demanding environments.\n\nThis MOSFET array is widely used in home appliances, industrial drives, and telecommunications. Home appliances benefit from its energy efficiency and durability. Industrial drives utilize its high power handling for motor control. Telecommunications equipment relies on its fast switching for signal processing.\n\nReady to incorporate the SQUN702E-T1_GE3 into your projects? Submit an inquiry to get started. Our team is here to provide the support and information you need.
General specs
- Product Status: Active
- FET Type: N and P-Channel, Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V, 200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc)
- Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
- Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
- Power - Max: 48W (Tc), 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: Die
- Supplier Device Package: Die
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