SQS966ENW-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CHAN 60V
$1.03
Available to order
Reference Price (USD)
3,000+
$0.39816
6,000+
$0.37232
15,000+
$0.35940
30,000+
$0.35235
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Vishay Siliconix SQS966ENW-T1_GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SQS966ENW-T1_GE3
$1.03
Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
- Power - Max: 27.8W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: PowerPAK® 1212-8W Dual
- Supplier Device Package: PowerPAK® 1212-8W Dual
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