Shopping cart

Subtotal: $0.00

SQJ211ELP-T1_GE3

Vishay Siliconix
SQJ211ELP-T1_GE3 Preview
Vishay Siliconix
MOSFET P-CH 100V 33.6A PPAK SO-8
$1.67
Available to order
Reference Price (USD)
1+
$1.67000
500+
$1.6533
1000+
$1.6366
1500+
$1.6199
2000+
$1.6032
2500+
$1.5865
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SQJ211ELP-T1_GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SQJ211ELP-T1_GE3

SQJ211ELP-T1_GE3

$1.67

Product details

Optimize your power management solutions with the SQJ211ELP-T1_GE3 single MOSFET transistor from Vishay Siliconix, a standout in the Discrete Semiconductor Products field (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional electrical characteristics designed for efficiency and reliability in demanding applications. The SQJ211ELP-T1_GE3 features advanced semiconductor technology that minimizes energy loss while maximizing power handling capabilities. Its innovative design includes enhanced protection features against common electrical stresses, ensuring long-term operational stability. The MOSFET excels in applications ranging from server power supplies and network equipment to automotive electronics and industrial control systems. For renewable energy implementations, it's particularly effective in micro-inverters and charge controllers. The component also performs exceptionally in professional audio equipment and high-end power amplifiers where clean power delivery is crucial. With its combination of robust construction and electrical efficiency, the SQJ211ELP-T1_GE3 provides designers with a reliable solution for their power switching needs. Ready to incorporate this high-quality MOSFET into your designs? Visit our website to submit your inquiry online our sales team will provide prompt assistance with specifications, availability, and pricing information tailored to your requirements.

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 33.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

Viewed products

Diodes Incorporated

DMTH4014LPSWQ-13

$0.00 (not set)
onsemi

FCP11N60F

$0.00 (not set)
Microchip Technology

MSC090SMA070B

$0.00 (not set)
Infineon Technologies

IRL3705NSTRLPBF

$0.00 (not set)
Infineon Technologies

IPWS65R050CFD7AXKSA1

$0.00 (not set)
Renesas Electronics America Inc

2SK1157-E

$0.00 (not set)
Vishay Siliconix

SI3483CDV-T1-E3

$0.00 (not set)
Nexperia USA Inc.

BUK9M15-40HX

$0.00 (not set)
IXYS

IXTP42N25P

$0.00 (not set)
Rectron USA

RM2308

$0.00 (not set)
Top