SISS80DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 58.3A/210A PPAK
$1.75
Available to order
Reference Price (USD)
1+
$1.75000
500+
$1.7325
1000+
$1.715
1500+
$1.6975
2000+
$1.68
2500+
$1.6625
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Vishay Siliconix SISS80DN-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SISS80DN-T1-GE3
$1.75
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Vgs (Max): +12V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 65W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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