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SISS23DN-T1-GE3

Vishay Siliconix
SISS23DN-T1-GE3 Preview
Vishay Siliconix
MOSFET P-CH 20V 50A PPAK 1212-8S
$0.90
Available to order
Reference Price (USD)
3,000+
$0.37070
6,000+
$0.34664
15,000+
$0.33461
30,000+
$0.32805
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Vishay Siliconix SISS23DN-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SISS23DN-T1-GE3

SISS23DN-T1-GE3

$0.90

Product details

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S

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