SISH536DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 30 V (D-S) MOSFET POWE
$0.66
Available to order
Reference Price (USD)
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$0.66000
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$0.6534
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$0.6468
1500+
$0.6402
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$0.6336
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$0.627
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SISH536DN-T1-GE3
$0.66
Product details
Elevate your electronic designs with the SISH536DN-T1-GE3 single MOSFET transistor from Vishay Siliconix, a premium offering in the Discrete Semiconductor Products market (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional power handling capabilities combined with efficient switching characteristics. The SISH536DN-T1-GE3 features advanced semiconductor architecture that ensures minimal energy loss and optimal thermal management. Its design incorporates protective features that enhance reliability in demanding operating conditions. The MOSFET demonstrates excellent performance in automotive electronics, particularly in engine control units, lighting systems, and battery management solutions. Industrial applications include motor drives, power tools, and factory automation equipment. For renewable energy systems, it's particularly effective in wind power converters and solar tracking mechanisms. The component also finds significant use in high-end computing applications and data storage systems. With its combination of power efficiency and robust construction, the SISH536DN-T1-GE3 provides design engineers with a versatile solution for various power management challenges. To discover how this MOSFET can benefit your specific application, we encourage you to submit an online inquiry. Our knowledgeable staff will provide detailed product information and purchasing options to meet your project requirements and timeline.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 67.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8SH
- Package / Case: PowerPAK® 1212-8SH
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