SISF04DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET DUAL N-CH 30V PPAK 1212-8
$1.41
Available to order
Reference Price (USD)
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$1.41000
500+
$1.3959
1000+
$1.3818
1500+
$1.3677
2000+
$1.3536
2500+
$1.3395
Exquisite packaging
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SISF04DN-T1-GE3
$1.41
Product details
The SISF04DN-T1-GE3 by Vishay Siliconix is a premium MOSFET array in the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays. This product is engineered for high-efficiency power switching, making it ideal for advanced electronic systems.\n\nNotable features of the SISF04DN-T1-GE3 include optimized switching performance, low on-resistance, and excellent thermal conductivity. The array configuration allows for compact and efficient designs, reducing overall system complexity. Its high reliability ensures long-term performance in various applications.\n\nApplications include data centers, automotive infotainment, and portable devices. Data centers benefit from its efficiency in power distribution. Automotive infotainment systems rely on its performance for audio and display controls. Portable devices utilize its compact size and low power consumption.\n\nExplore the benefits of the SISF04DN-T1-GE3. Request a quote today to learn more about how it can enhance your designs. Our team is ready to assist with your technical and procurement needs.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
- Power - Max: 5.2W (Ta), 69.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 1212-8SCD
- Supplier Device Package: PowerPAK® 1212-8SCD
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