SIS407DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 25A PPAK1212-8
$1.05
Available to order
Reference Price (USD)
3,000+
$0.47560
6,000+
$0.45327
15,000+
$0.43732
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SIS407DN-T1-GE3
$1.05
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 93.8 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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