SIRC18DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 60A PPAK SO-8
$1.42
Available to order
Reference Price (USD)
3,000+
$0.60291
6,000+
$0.57277
15,000+
$0.55123
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SIRC18DP-T1-GE3
$1.42
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 15 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 54.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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