SIR882BDP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 16.5/67.5A PPAK
$1.68
Available to order
Reference Price (USD)
1+
$1.68000
500+
$1.6632
1000+
$1.6464
1500+
$1.6296
2000+
$1.6128
2500+
$1.596
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Vishay Siliconix SIR882BDP-T1-RE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SIR882BDP-T1-RE3
$1.68
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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