Shopping cart

Subtotal: $0.00

SIR681DP-T1-RE3

Vishay Siliconix
SIR681DP-T1-RE3 Preview
Vishay Siliconix
MOSFET P-CH 80V 17.6A/71.9A PPAK
$2.70
Available to order
Reference Price (USD)
1+
$2.70000
500+
$2.673
1000+
$2.646
1500+
$2.619
2000+
$2.592
2500+
$2.565
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SIR681DP-T1-RE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SIR681DP-T1-RE3

SIR681DP-T1-RE3

$2.70

Product details

Vishay Siliconix's SIR681DP-T1-RE3 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The SIR681DP-T1-RE3 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The SIR681DP-T1-RE3 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

Viewed products

STMicroelectronics

STW77N65M5

$0.00 (not set)
Vishay Siliconix

SISHA04DN-T1-GE3

$0.00 (not set)
Vishay Siliconix

IRLR014TRLPBF

$0.00 (not set)
onsemi

FCMT180N65S3

$0.00 (not set)
Microchip Technology

APT9F100B

$0.00 (not set)
Rohm Semiconductor

RCX330N25

$0.00 (not set)
STMicroelectronics

STP70NF03L

$0.00 (not set)
Vishay Siliconix

SQD90P04-9M4L_GE3

$0.00 (not set)
IXYS

IXTP86N20T

$0.00 (not set)
Yangzhou Yangjie Electronic Technology Co.,Ltd

2N7002KW-F2-0000HF

$0.00 (not set)
Top