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SIR681DP-T1-RE3

Vishay Siliconix
SIR681DP-T1-RE3 Preview
Vishay Siliconix
MOSFET P-CH 80V 17.6A/71.9A PPAK
$2.70
Available to order
Reference Price (USD)
1+
$2.70000
500+
$2.673
1000+
$2.646
1500+
$2.619
2000+
$2.592
2500+
$2.565
Exquisite packaging
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Vishay Siliconix SIR681DP-T1-RE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SIR681DP-T1-RE3

SIR681DP-T1-RE3

$2.70

Product details

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

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