SIHP30N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 29A TO220AB
$6.27
Available to order
Reference Price (USD)
1+
$6.62000
10+
$5.91300
100+
$4.84830
500+
$3.92590
1,000+
$3.31100
3,000+
$3.14545
Exquisite packaging
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SIHP30N60E-GE3
$6.27
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: -
- Package / Case: TO-220-3
