SIHP050N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 51A TO220AB
$6.14
Available to order
Reference Price (USD)
1+
$10.60000
10+
$9.57900
100+
$7.94220
500+
$6.71460
1,000+
$5.89620
Exquisite packaging
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| EMS | 3-7 days |
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SIHP050N60E-GE3
$6.14
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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