Shopping cart

Subtotal: $0.00

SIHG24N65E-GE3

Vishay Siliconix
SIHG24N65E-GE3 Preview
Vishay Siliconix
MOSFET N-CH 650V 24A TO247AC
$4.02
Available to order
Reference Price (USD)
1+
$7.00000
10+
$6.27000
100+
$5.18100
500+
$4.23720
1,000+
$3.60800
2,500+
$3.43860
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SIHG24N65E-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SIHG24N65E-GE3

SIHG24N65E-GE3

$4.02

Product details

The SIHG24N65E-GE3 single MOSFET transistor from Vishay Siliconix represents excellence in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the evolving demands of modern power electronics, offering superior switching performance and reliability. Key features of the SIHG24N65E-GE3 include optimized gate drive characteristics, low conduction resistance, and excellent thermal properties. These attributes contribute to reduced power losses and improved system efficiency in various applications. The MOSFET performs exceptionally in agricultural automation systems, construction equipment electronics, and marine power systems. For consumer applications, it's ideal for high-performance kitchen appliances, personal care devices, and home entertainment systems. The component also excels in security system power management and emergency lighting applications. With its robust design and electrical efficiency, the SIHG24N65E-GE3 provides design engineers with a reliable solution for diverse power control needs. Whether you're developing new products or upgrading existing systems, this MOSFET offers the performance and durability you require. Ready to explore how the SIHG24N65E-GE3 can enhance your designs? Submit your inquiry through our online portal to receive prompt assistance from our technical sales team, including detailed specifications and competitive pricing information.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3

Viewed products

NXP USA Inc.

BSH112,235

$0.00 (not set)
Nexperia USA Inc.

NXV100XPR

$0.00 (not set)
IXYS

IXFN80N50

$0.00 (not set)
IXYS

IXTA62N15P

$0.00 (not set)
Diodes Incorporated

DMN6140LQ-13

$0.00 (not set)
onsemi

FDN308P

$0.00 (not set)
Microchip Technology

APT13F120B

$0.00 (not set)
Vishay Siliconix

IRFP350PBF

$0.00 (not set)
Infineon Technologies

IPD50P03P4L11ATMA2

$0.00 (not set)
Diodes Incorporated

DMP4051LK3-13

$0.00 (not set)
Top