SIHG180N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 19A TO247AC
$3.93
Available to order
Reference Price (USD)
1+
$4.28000
10+
$3.84500
100+
$3.17690
500+
$2.59818
1,000+
$2.21236
2,500+
$2.10849
5,000+
$2.03429
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| EMS | 3-7 days |
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SIHG180N60E-GE3
$3.93
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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