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SIHG11N80AE-GE3

Vishay Siliconix
SIHG11N80AE-GE3 Preview
Vishay Siliconix
MOSFET N-CH 800V 8A TO247AC
$2.89
Available to order
Reference Price (USD)
1+
$2.89000
500+
$2.8611
1000+
$2.8322
1500+
$2.8033
2000+
$2.7744
2500+
$2.7455
Exquisite packaging
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Vishay Siliconix SIHG11N80AE-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SIHG11N80AE-GE3

SIHG11N80AE-GE3

$2.89

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3

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