SIHD6N65E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 650V 7A DPAK
$1.69
Available to order
Reference Price (USD)
1+
$1.82000
10+
$1.65400
100+
$1.33900
500+
$1.05300
1,000+
$0.88140
3,000+
$0.82420
6,000+
$0.79560
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Vishay Siliconix SIHD6N65E-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SIHD6N65E-GE3
$1.69
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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