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SIHD3N50D-GE3

Vishay Siliconix
SIHD3N50D-GE3 Preview
Vishay Siliconix
MOSFET N-CH 500V 3A TO252AA
$0.97
Available to order
Reference Price (USD)
1+
$1.03000
10+
$0.90100
100+
$0.69500
500+
$0.51480
1,000+
$0.41184
3,000+
$0.37323
6,000+
$0.34749
Exquisite packaging
Discount
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Vishay Siliconix SIHD3N50D-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SIHD3N50D-GE3

SIHD3N50D-GE3

$0.97

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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