SIHB28N60EF-T1-GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 600V
$6.50
Available to order
Reference Price (USD)
1+
$6.50000
500+
$6.435
1000+
$6.37
1500+
$6.305
2000+
$6.24
2500+
$6.175
Exquisite packaging
Discount
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DHL / Fedex / UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Vishay Siliconix SIHB28N60EF-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB