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SIHB053N60E-GE3

Vishay Siliconix
SIHB053N60E-GE3 Preview
Vishay Siliconix
E SERIES POWER MOSFET D2PAK (TO-
$6.62
Available to order
Reference Price (USD)
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$6.62000
500+
$6.5538
1000+
$6.4876
1500+
$6.4214
2000+
$6.3552
2500+
$6.289
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Vishay Siliconix SIHB053N60E-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SIHB053N60E-GE3

SIHB053N60E-GE3

$6.62

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3722 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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