Shopping cart

Subtotal: $0.00

SIHA17N80E-GE3

Vishay Siliconix
SIHA17N80E-GE3 Preview
Vishay Siliconix
N-CHANNEL 800V
$5.09
Available to order
Reference Price (USD)
1+
$5.09000
500+
$5.0391
1000+
$4.9882
1500+
$4.9373
2000+
$4.8864
2500+
$4.8355
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SIHA17N80E-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SIHA17N80E-GE3

SIHA17N80E-GE3

$5.09

Product details

Enhance your electronic designs with the SIHA17N80E-GE3 single MOSFET transistor from Vishay Siliconix, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The SIHA17N80E-GE3 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the SIHA17N80E-GE3 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the SIHA17N80E-GE3 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack

Viewed products

STMicroelectronics

STP40N65M2

$0.00 (not set)
Wolfspeed, Inc.

C3M0040120K

$0.00 (not set)
Toshiba Semiconductor and Storage

TK3A60DA(Q,M)

$0.00 (not set)
Rohm Semiconductor

RCJ331N25TL

$0.00 (not set)
Nexperia USA Inc.

BSS123,215

$0.00 (not set)
onsemi

NTD4858N-1G

$0.00 (not set)
Rohm Semiconductor

SCT4062KEC11

$0.00 (not set)
onsemi

NTHS4501NT1G

$0.00 (not set)
IXYS

IXFP16N50P3

$0.00 (not set)
onsemi

NVMTS001N06CTXG

$0.00 (not set)
Top