SIDR5802EP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 80 V (D-S) 175C MOSFET
$3.01
Available to order
Reference Price (USD)
1+
$3.01000
500+
$2.9799
1000+
$2.9498
1500+
$2.9197
2000+
$2.8896
2500+
$2.8595
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Vishay Siliconix SIDR5802EP-T1-RE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SIDR5802EP-T1-RE3
$3.01
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 34.2A (Ta), 153A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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