SIDR578EP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 150 V (D-S) 175C MOSFE
$3.09
Available to order
Reference Price (USD)
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$3.09000
500+
$3.0591
1000+
$3.0282
1500+
$2.9973
2000+
$2.9664
2500+
$2.9355
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SIDR578EP-T1-RE3
$3.09
Product details
Discover the exceptional capabilities of Vishay Siliconix's SIDR578EP-T1-RE3, a premium single MOSFET transistor in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the rigorous demands of modern power electronics, offering superior performance in switching and amplification applications. The SIDR578EP-T1-RE3 boasts impressive technical features including optimized gate control, low leakage current, and excellent thermal management properties. Its robust design ensures reliable operation in various environmental conditions, from industrial settings to outdoor installations. The MOSFET's versatile nature makes it ideal for use in electric powertrains, industrial automation controllers, and high-frequency power converters. For consumer applications, it's perfect for high-performance computing, advanced gaming systems, and next-generation home appliances. The component also finds significant utility in green energy applications such as photovoltaic systems and energy storage solutions. With its balanced combination of power handling and efficiency, the SIDR578EP-T1-RE3 provides an optimal solution for your most challenging design requirements. Interested in learning more about how this MOSFET can enhance your projects? Our team is ready to assist simply submit your inquiry through our online portal for personalized support and competitive pricing options.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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