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SIDR5102EP-T1-RE3

Vishay Siliconix
SIDR5102EP-T1-RE3 Preview
Vishay Siliconix
N-CHANNEL 100 V (D-S) 175C MOSFE
$3.11
Available to order
Reference Price (USD)
1+
$3.11000
500+
$3.0789
1000+
$3.0478
1500+
$3.0167
2000+
$2.9856
2500+
$2.9545
Exquisite packaging
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Vishay Siliconix SIDR5102EP-T1-RE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SIDR5102EP-T1-RE3

SIDR5102EP-T1-RE3

$3.11

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 28.2A (Ta), 126A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8DC
  • Package / Case: PowerPAK® SO-8

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