SI8816EDB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 4MICROFOOT
$0.56
Available to order
Reference Price (USD)
3,000+
$0.15791
6,000+
$0.14834
15,000+
$0.13877
30,000+
$0.12728
75,000+
$0.12250
Exquisite packaging
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| EMS | 3-7 days |
Vishay Siliconix SI8816EDB-T2-E1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SI8816EDB-T2-E1
$0.56
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA
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