Shopping cart

Subtotal: $0.00

SI7106DN-T1-GE3

Vishay Siliconix
SI7106DN-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 20V 12.5A PPAK1212-8
$1.64
Available to order
Reference Price (USD)
3,000+
$0.61041
6,000+
$0.58175
15,000+
$0.56128
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SI7106DN-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SI7106DN-T1-GE3

SI7106DN-T1-GE3

$1.64

Product details

Enhance your electronic designs with the SI7106DN-T1-GE3 single MOSFET transistor from Vishay Siliconix, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The SI7106DN-T1-GE3 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the SI7106DN-T1-GE3 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the SI7106DN-T1-GE3 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8

Viewed products

Vishay Siliconix

SI4134DY-T1-E3

$0.00 (not set)
Vishay Siliconix

SIDR170DP-T1-RE3

$0.00 (not set)
Infineon Technologies

IPP050N10NF2SAKMA1

$0.00 (not set)
onsemi

NVGS4111PT1G

$0.00 (not set)
Rohm Semiconductor

RCJ050N25TL

$0.00 (not set)
onsemi

FCPF9N60NTYDTU

$0.00 (not set)
Infineon Technologies

IPI65R190C

$0.00 (not set)
STMicroelectronics

STF11NM60ND

$0.00 (not set)
Toshiba Semiconductor and Storage

SSM3K56CT,L3F

$0.00 (not set)
onsemi

NVMFS5C410NAFT3G

$0.00 (not set)
Top