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SI4090BDY-T1-GE3

Vishay Siliconix
SI4090BDY-T1-GE3 Preview
Vishay Siliconix
N-CHANNEL 100-V (D-S) MOSFET SO-
$1.56
Available to order
Reference Price (USD)
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$1.56000
500+
$1.5444
1000+
$1.5288
1500+
$1.5132
2000+
$1.4976
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$1.482
Exquisite packaging
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Vishay Siliconix SI4090BDY-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SI4090BDY-T1-GE3

SI4090BDY-T1-GE3

$1.56

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 18.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 12.2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 7.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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